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UFS 3.0 read and write test data exposure: spike UFS 2.1 and eMMC

日期: 2020-05-12
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    Shenzhen Acroview Technology Co., Ltd., a professional IC programmer manufacturer, has launched Universal Flash Storage (UFS) dedicated engineering and mass production Programmers, as well as automated Programming equipment. The newly-launched new-generation Programmer integrates UFS system design and application, and is suitable for R & D, product verification, and factory small and large batch production needs.

           In January 2018, UFS 3.0 was officially released. As an iterative upgrade product of UFS 2.0 and 2.1, UFS 3.0 brings very significant improvements and improvements in performance. However, there is currently no official commercial use of this flash memory, so we have no way of knowing his actual performance.

           A few days ago, a screenshot of the 1TB UFS 3.0 flash memory Androbench read and write test record was exposed on the Internet. 

           From this record, we can clearly see that the sequential read speed of UFS 3.0 reached 2279.8MB / s and the sequential write speed reached 1801.1MB / s. According to the current 700-800MB / s sequential reading speed of UFS 2.1, it is basically 2-3 times.

UFS 3.0 read and write test data exposure: spike UFS 2.1 and eMMC

           However, the UFS 3.0 4K reading and writing results are not much different from the existing UFS 2.1, and the possibility of optimization space is not ruled out.

           According to the previous introduction, UFS (Universal Flash Storage) 3.0 focuses on high performance and low power consumption. It is the first flash memory to introduce the MIPI M-PHY HS-Gear4 standard, with a single channel bandwidth of up to 23.2Gbps, which is UFS 2.0 / 2.1 Twice.

UFS 3.0 read and write test data exposure: spike UFS 2.1 and eMMC

           In addition, UFS 3.0 supports more partitions, error correction capability upgrade, voltage reaches 2.5V, and supports the latest NANG Flash media.

           The mainstream flagship chips in 2019 all support UFS 3.0, and it has been determined that Qualcomm Snapdragon 855 and Samsung Exynos 9820 are compatible with this new flash memory specification. Samsung has also said that it expects to launch models equipped with UFS 3.0 flash memory in the first half of this year. At present, it is speculated that there should be a product in the Samsung Galaxy S10 series, which uses UFS 3.0 specification flash memory, which may be the top-matched S10 + 5G version.

UFS 3.0 read and write test data exposure: spike UFS 2.1 and eMMC

           Previously, Taiwanese manufacturer Phison announced the development process on UFS flash memory. The group's UFS 2.1 is divided into two generations of products, with throughputs of 800MB / s and 1333MB / s, respectively, while the latest UFS 3.0 has a throughput of up to 2666MB / s, which is basically doubled compared to UFS 2.1.

UFS 3.0 read and write test data exposure: spike UFS 2.1 and eMMC

           It seems that the actual launch of UFS 3.0 products may take some time, but its actual performance should significantly exceed the existing UFS 2.1 products, we may wish to look forward to it.




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